Subhashis Gangopadhyay
VIDWAN ID: 228510

Prof Subhashis Gangopadhyay

Male Doctor of Philosophy
Professor | Department of Physics
Birla Institute of Technology & Sciences, Pilani
Rajasthan
Expertise: Applied Physics
75 Publications
0 Projects
2285 Scopus Citations
2244 CrossRef
14 Years 2 Months Total Experience
Publications
75 Total
Articles
67
Proceedings
8
Activity

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Scopus Scopus
2,285 Citations
22 h-index
CrossRef CrossRef
2,244 Citations
20 h-index
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Professional Recognition

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Personal Details

Doctor of Philosophy
2006
Michigan State University
Professor
Jan 2023 – Present
Birla Institute of Technology & Sciences, Pilani | Department of Physics
Associate Professor
Jul 2012 – Dec 2022
Birla Institute of Technology & Sciences, Pilani | Department of Physics
Physical Sciences
Applied Physics

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Scholarly Work

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Semiconducting metal (Cu, Zn) oxide nano-structures: : growth mechanism, properties and gas sensing application

University Birla Institute of Technology and Science Pilani
Year 2020
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Scholarly Publications

Erratum: Publisher's note: "Interfacial interactions at Au/Si 3N4/Si(111) and Ni/Si3N4/Si(111) structures with ultrathin nitride films" (Applied Physics Letters (2004) 84 (5031) DOI: 10.1063/1.1785787)

Erratum
Applied Physics Letters. Year: 2004. Volume: 85 , Issue: 8 , Pages: 1442 .
Authors: L. Aballe; L. Gregoratti; A. Barinov; M. Kiskinova; T. Clausen; S. Gangopadhyay; J. Falta

Microstructural, chemical bonding, stress development and charge storage characteristics of Ge nanocrystals embedded in hafnium oxide

Journal Article
Journal of Nanoparticle Research. Year: 2011. Volume: 13 , Issue: 2 , Pages: 587-595 .
Authors: S. Das; R. K. Singha; S. Manna; S. Gangopadhyay; A. Dhar; S. K. Ray

Cleaning and growth morphology of gan and ingan surfaces

Journal Article
PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS. Year: 2011. Volume: 248 , Issue: 8 , Pages: 1800-1809 .
Authors: J. Falta; Th. Schmidt; S. Gangopadhyay; Chr. Schulz; S. Kuhr; N. Berner; J. I. Flege; A. Pretorius; A. Rosenauer; K. Sebald; H. Lohmeyer; J. Gutowski; S. Figge; T. Yamaguchi; D. Hommel

Imaging and manipulation of the Si(100) surface by small-amplitude NC-AFM at zero and very low applied bias

Open Access
Journal Article
Journal of Physics: Condensed Matter. Year: 2012. Volume: 24 , Issue: 8 .
Authors: A Sweetman; R Danza; S Gangopadhyay; P Moriarty

Two-step growth of InGaN quantum dots and application to light emitters

Journal Article
PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS. Year: 2007. Volume: 4 , Issue: 7 , Pages: 2407-2410 .
Authors: Yamaguchi, T.; Dennemarck, J.; Tessarek, C.; Sebald, K.; Gangopadhyay, S.; Falta, J.; Gutowski, J.; Figge, S.; Hommel, D.

Formation and morphology of InGaN nanoislands on GaN(0001)

Journal Article
Year: 2007. Volume: 25 , Issue: 3 , Pages: 791-795 .
Authors: Gangopadhyay, S.; Schmidt, Th.; Einfeldt, S.; Yamaguchi, T.; Hommel, D.; Falta, J.

A novel approach for the growth of InGaN quantum dots

Journal Article
PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS. Year: 2006. Volume: 3 , Issue: 11 , Pages: 3955-3958 .
Authors: Yamaguchi, T.; Sebald, K.; Lohmeyer, H.; Gangopadhyay, S.; Falta, J.; Gutowski, J.; Figge, S.; Hommel, D.

Growth and formation of InGaN and GaN nano-structures studied by STM

Open Access
Journal Article
Year: 2006. Volume: 4 , Pages: 90-95 .
Authors: Gangopadhyay, S.; Schmidt, T.; Einfeldt, S.; Yamaguchi, T.; Hommel, D.; Falta, J.
Showing 1 to 8 of 75 publications