A. P. Gnana Prakash
VIDWAN ID: 129337

Prof A. P. Gnana Prakash

Male Doctor of Philosophy
Professor | Department of Physics
University of Mysore, Mysore
Karnataka
Expertise: Applied Physics
120 Publications
0 Projects
1033 Scopus Citations
899 CrossRef
19 Years 6 Months Total Experience
Publications
120 Total
Articles
83
Chapters
1
Proceedings
36
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Scopus Scopus
1,033 Citations
19 h-index
CrossRef CrossRef
899 Citations
18 h-index
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Personal Details

Doctor of Philosophy
2002
Regional Medical Research Centre for Tribals ICMR
Professor
Mar 2007 – Present
University of Mysore, Mysore | Department of Physics
Physical Sciences
Applied Physics

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Scholarly Work

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Scholarly Publications

The impact of substrate bias on proton damage in 130 nm CMOS technology

Conference Paper
Year: 2005. Pages: 117-121 .
Authors: B.M. Haugerud; S. Venkataraman; A.K. Sutton; A.P.G. Prakash; J.D. Cressler; Guofu Niu; P.W. Marshall; A.J. Joseph

A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs

Conference Paper
IEEE Transactions on Nuclear Science. Year: 2005. Volume: 52 , Issue: 6 , Pages: 2358-2365 .
Authors: A.K. Sutton; B.M. Haugerud; A.P.G. Prakash; Bongim Jun; J.D. Cressler; C.J. Marshall; P.W. Marshall; R. Ladbury; F. Guarin; A.J. Joseph

I - V and deep level transient spectroscopy studies on 60 MeV oxygen ion irradiated NPN transistors

Journal Article
Authors: A.P. Gnana Prakash; S.C. Ke; K. Siddappa

Effect of 30 MeV Li3+ ion and 8MeV electron irradiation on N-channel MOSFETs

Journal Article
Radiation Effects and Defects in Solids. Year: 2002. Volume: 157 , Issue: 3 , Pages: 323-331 .
Authors: Gnana Prakash; Prashanth Ganesh; Y. N. Nagesha; D. Umakanth; S. K. Arora; K. Siddappa

Modification of power diode characteristics using bremsstrahlung radiation from microtron

Journal Article
Radiation Physics and Chemistry. Year: 1999. Volume: 55 , Issue: 4 , Pages: 461-464 .
Authors: Ganesh; K.C. Prashanth; Y.N. Nagesha; A.P. Gnana Prakash; D. Umakanth; Manjunatha Pattabi; K. Siddappa; Saji Salkalachen; Amitav Roy

Application of advanced 200 GHz Si-Ge HBTs for high dose radiation environments

Journal Article
Solid-State Electronics. Year: 2010. Volume: 54 , Issue: 12 , Pages: 1554-1560 .
Authors: K.C. Praveen; N. Pushpa; Y.P. Prabakara Rao; G. Govindaraj; John D. Cressler; A.P. Gnana Prakash

The effect of 63MeV hydrogen ion irradiation on 65GHz UHV/CVD SiGe HBT BiCMOS technology

Conference Paper
Radiation Effects and Defects in Solids. Year: 2011. Volume: 166 , Issue: 8-9 , Pages: 703-709 .
Authors: A. P. Gnana Prakash; John D. Cressler

Source dependence and technology scaling effects on the radiation tolerance of SiGe HBTs at extreme dose and fluence levels

Conference Paper
Year: 2007.
Authors: Akil K. Sutton; A. P. Gnana Prakash; John D. Cressler; Jessica Metcalfe; Johnathan Rice; Alexander A. Grillo; Ashley Jones; Forest Martinez-McKinney; Paul Mekhedjian; Hartmut F. W. Sadrozinski; Abe Seiden; Edwin Spencer; Max Wilder; Robert Hackenburg; James Kierstead; Sergio Rescia
Showing 1 to 8 of 120 publications