Ministry of Education
N N Murty
VIDWAN ID: 110496

Dr N N Murty

Male Doctor of Philosophy
Professor | Department of Electrical Engineering
Indian Institute of Technology, Tirupati
Andhra Pradesh
Expertise: Electrical and Electronic Engineering
ORCID 0000-0003-2253-5383 Scopus 14032056800 Google Scholar qy11FQ0AAAAJ
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51 Publications
0 Projects
440 Scopus Citations
403 CrossRef
8 Years 5 Months Total Experience
Publications
51 Total
Articles
38
Proceedings
13
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Scopus Scopus
440 Citations
10 h-index
CrossRef CrossRef
403 Citations
10 h-index
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Personal Details

Doctor of Philosophy
N/A
Professor
Jan 2024 – Present
Indian Institute of Technology, Tirupati | Department of Electrical Engineering
Associate Professor
Apr 2018 – Dec 2023
Indian Institute of Technology, Tirupati | Department of Electrical Engineering
Engineering and Technology
Electrical and Electronic Engineering

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Scholarly Work

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Scholarly Publications

Investigation of X-ray spectral response of D-T fusion produced neutron irradiated PIPS detectors for plasma X-ray diagnostics

Open Access
Journal Article
Journal of Instrumentation. Year: 2015. Volume: 10 , Issue: 10 .
Authors: P. Vigneshwara Raja; N.V.L. Narasimha Murty; C.V.S. Rao; Mitul Abhangi
DOI 10.1088/1748-0221/10/10/P10018 Crossref Crossref: 6 Scopus Scopus: 6

Fabrication and characterization of Schottky diode on ultra thin ZnO film and its application for UV detection

Journal Article
Materials Research Express. Year: 2019. Volume: 6 , Issue: 11 .
Authors: Basavaraj S Sannakashappanavar; Aniruddh Bahadur Yadav; C R Byrareddy; N V L Narasimha Murty
DOI 10.1088/2053-1591/ab4cba Crossref Crossref: 9 Scopus Scopus: 9

Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics

Open Access
Journal Article
Journal of Semiconductors. Year: 2019. Volume: 40 , Issue: 2 .
Authors: P. Vigneshwara Raja; N. V. L. Narasimha Murty
DOI 10.1088/1674-4926/40/2/022804 Crossref Crossref: 8 Scopus Scopus: 8

Thermal annealing studies in epitaxial 4H-SiC Schottky barrier diodes over wide temperature range

Journal Article
Microelectronics Reliability. Year: 2018. Volume: 87 , Pages: 213-221 .
Authors: P. Vigneshwara Raja; N.V.L. Narasimha Murty
DOI 10.1016/j.microrel.2018.06.021 Crossref Crossref: 16 Scopus Scopus: 17

Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC Schottky barrier diodes

Journal Article
Journal of Applied Physics. Year: 2018. Volume: 123 , Issue: 16 .
Authors: P. Vigneshwara Raja; N. V. L. Narasimha Murty
DOI 10.1063/1.5003068 Crossref Crossref: 12 Scopus Scopus: 18

Spectroscopic performance studies of 4H-SiC detectors for fusion alpha-particle diagnostics

Journal Article
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. Year: 2017. Volume: 869 , Pages: 118-127 .
Authors: P. Vigneshwara Raja; Jamil Akhtar; C.V.S. Rao; Sudhirsinh Vala; Mitul Abhangi; N.V.L. Narasimha Murty
DOI 10.1016/j.nima.2017.07.017 Crossref Crossref: 28 Scopus Scopus: 28

Performance of epitaxial and HPSI 4H-SiC detectors for plasma X-ray imaging systems

Journal Article
Journal of Instrumentation. Year: 2017. Volume: 12 , Issue: 8 .
Authors: P.V. Raja; J. Akhtar; S. Vala; M. Abhangi; N.V.L.N. Murty
DOI 10.1088/1748-0221/12/08/P08006 Crossref Crossref: 5 Scopus Scopus: 5

Electrically active defects in neutron-irradiated HPSI 4H-SiC X-ray detectors investigated by ZB-TSC technique

Journal Article
IEEE Transactions on Nuclear Science. Year: 2017. Volume: 64 , Issue: 8 , Pages: 2377-2385 .
Authors: P. Vigneshwara Raja; N. V. L. Narasimha Murty
DOI 10.1109/TNS.2017.2720192 Crossref Crossref: 3 Scopus Scopus: 9
Showing 1 to 8 of 51 publications