Dr Arabinda Haldar
Professor
| Department of Physics
Indian Institute of Technology, Hyderabad
Telangana
Expertise:
Multidisciplinary Physics
94
Publications
0
Projects
1525
Scopus Citations
1596
CrossRef
15 Years 8 Months Total Experience
Scopus
1,525
Citations
19
h-index
CrossRef
1,596
Citations
20
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Professional Recognition
Research Excellence Award
2024
IIT Hyderabad
Young Scientist Research Award
2021
BRNS, India
Early Career Research Award
2018
SERB, India
Ramanujan Fellowship
2017
DST, India
Community & Membership
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'Materials Today Electronics' - a sister journal of "Materials Today"
Editorial Board MemberScientific Reports (Nature Publishing Group)
Editorial Board MemberIEEE
IEEE Senior MemberPersonal Details
Doctor of Philosophy
2011
Indian Institute of Technology, Hyderabad
Bachelor of Science
2005
N/A
Professor
Feb 2026 – Present
Indian Institute of Technology, Hyderabad
| Department of Physics
Associate Professor
Oct 2021 – Feb 2026
Indian Institute of Technology, Hyderabad
| Department of Physics
Assistant Professor (Grade-I)
Aug 2016 – Oct 2021
Indian Institute of Technology, Hyderabad
| Department of Physics
Post-Doctoral Fellow
Jun 2014 – Jul 2016
National University of Singapore
Scientist
Mar 2013 – May 2014
CSIR- INSTITUTE OF MINERALS AND MATERIALS TECHNOLOGY
| Department of Condensed Matter and Materials Physics
Post-Doctoral Fellow
Jan 2011 – Mar 2013
Colorado State University, USA
Physical Sciences
Scholarly Work
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Tunable magnetization dynamics in novel thin film nanostructures
Control of ferromagnetic resonance properties via spin pumping and exchange bias
Magnetization dynamics in novel magnetic nanostructures
Investigation of exotic spin configurations and their dynamics in multilayer magnetic thin film stacks
Investigation on Nd-Fe-B based permanent magnets
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Scholarly Publications
Proximity induced band gap opening in topological-magnetic heterostructure (Ni80Fe20/p-TlBiSe2/p-Si) under ambient condition
Open Access
Perpendicular magnetic anisotropy in a sputter deposited nanocrystalline high entropy alloy thin film
Bias-Field-Free Microwave Operation in NiFe/FeMn Exchange Biased Bilayers by Varying FeMn Thickness
Skyrmion based 3D low complex runtime reconfigurable architecture design methodology of universal logic gate
Skyrmion based majority logic gate by voltage controlled magnetic anisotropy in a nanomagnetic device
Open AccessDeposition Pressure Dependence on Spin Hall Angle of W Thin Films Grown on NiFe
Effect of growth rate on structural, magnetic and spin dynamic properties of Co2FeAl thin films
Voltage-controlled magnetic anisotropy gradient-driven skyrmion-based half-adder and full-adder
Showing 1 to 8 of 94 publications